STN9926 STN9926 STN9926 STN9926 dual n channel enhancement mode mosfet 5a 120 bentley square, mountain view, ca 94040 usa www.syonsontech.com copyright ? 2007, stanson corp. STN9926 2007. v1 1 description description description description the STN9926 is the dual n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . pin pin pin pin configuration configuration configuration configuration sop-8 sop-8 sop-8 sop-8 part part part part marking marking marking marking sop-8 sop-8 sop-8 sop-8 ordering ordering ordering ordering information information information information process code : a ~ z ; a ~ z s tn9926s8rg s8 : sop-8 ; r : tape reel ; g : pb C free s tn9926s8tg s8 : sop-8 ; t : t ube ; g : pb C free part part part part number number number number package package package package part part part part marking marking marking marking STN9926s8rg sop-8 STN9926 STN9926s8tg sop-8 STN9926 feature feature feature feature ? 20v/ 5 .0a, r ds(on) = 5 0 m @vgs = 4.5v ? 20v/ 4.0 a, r ds(on) = 65 m @vgs = 2.5v ? 20v/2.8a, r ds(on) = 90m @vgs = 1.8v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability ? sop-8 package design
STN9926 STN9926 STN9926 STN9926 dual n channel enhancement mode mosfet 5a 120 bentley square, mountain view, ca 94040 usa www.syonsontech.com copyright ? 2007, stanson corp. STN9926 2007. v1 2 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical unit unit unit unit drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain current (tj=150 ) t a =25 t a =70 i d 5.0 4.0 a pulsed drain current i dm 30 a continuous source current (diode conduction) i s 1.6 a power dissipation t a =25 t a =70 p d 2.8 1.8 w operation junction temperature t j -55/150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient r ja 105 /w
STN9926 STN9926 STN9926 STN9926 dual n channel enhancement mode mosfet 5a 120 bentley square, mountain view, ca 94040 usa www.syonsontech.com copyright ? 2007, stanson corp. STN9926 2007. v1 3 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit static static static static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =v gs ,i d =250 ua 0.4 1.0 v gate leakage current i gss v ds =0v,v gs = 12v 100 na zero gate voltage drain current i dss t j =55 v ds =20v,v gs =0v 1 ua v ds =20v,v gs =0v 5 on-state drain current i d(on) v ds Q 5v,v gs =4.5v 6 0 a drain-source on-resistance r ds(on) v gs = 4.5v, i d =5.0a v gs =2 .5v, i d =4.0a v gs =1.8v,i d =2.8a 0. 0 04 0. 0 55 0. 0 75 0. 0 50 0. 0 65 0. 0 90 forward tran conductance g fs v ds =5.0v,i d =3.6a 10 s diode forward voltage v sd i s =1.6a,v gs =0v 0.8 1.2 v dynamic dynamic dynamic dynamic total gate charge q g v ds =6.0v,v gs =4.5v i d 2.8a 4.8 8.0 nc gate-source charge q gs 1.0 gate-drain charge q gd 1.0 input capacitance ciss vds=6 .0 v,vgs=0v f=1mhz 485 pf output capacitance coss 85 reverse transfer c apacitance crss 40 turn-on time t d(on) tr v dd =15v,r l =15 i d =1a,v gen =10v r g =6 12 20 ns 10 20 turn-off time t d(off) tf 30 36 15 17
STN9926 STN9926 STN9926 STN9926 dual n channel enhancement mode mosfet 5a 120 bentley square, mountain view, ca 94040 usa www.syonsontech.com copyright ? 2007, stanson corp. STN9926 2007. v1 4 typical typical typical typical characterictics characterictics characterictics characterictics ( 25 unless note )
STN9926 STN9926 STN9926 STN9926 dual n channel enhancement mode mosfet 5a 120 bentley square, mountain view, ca 94040 usa www.syonsontech.com copyright ? 2007, stanson corp. STN9926 2007. v1 5 typical typical typical typical characterictics characterictics characterictics characterictics ( 25 unless note )
STN9926 STN9926 STN9926 STN9926 dual n channel enhancement mode mosfet 5a 120 bentley square, mountain view, ca 94040 usa www.syonsontech.com copyright ? 2007, stanson corp. STN9926 2007. v1 6 typical typical typical typical characterictics characterictics characterictics characterictics ( 25 unless note ) typical typical typical typical characterictics characterictics characterictics characterictics (p mos)
STN9926 STN9926 STN9926 STN9926 dual n channel enhancement mode mosfet 5a 120 bentley square, mountain view, ca 94040 usa www.syonsontech.com copyright ? 2007, stanson corp. STN9926 2007. v1 7 sop-8 sop-8 sop-8 sop-8 package package package package outline outline outline outline
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